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JANTXV2N6338 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTXV2N6338

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3

Description

Bipolar (BJT) Transistor NPN 100 V 50 µA 200 W Through Hole TO-3

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
50 µA
Current - Collector Cutoff (Max)
50µA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10A, 2V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-204AA, TO-3
Power - Max
200 W
Series
Military, MIL-PRF-19500/509
Supplier Device Package
TO-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.8V @ 2.5A, 25A
Voltage - Collector Emitter Breakdown (Max)
100 V

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