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JAN2N697S product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N697S

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-39 (TO-205AD)

Description

Bipolar (BJT) Transistor NPN 40 V 600 mW Through Hole TO-39 (TO-205AD)

Datasheet Not provided
Specifications
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
600 mW
Series
Military, MIL-PRF-19500/99
Supplier Device Package
TO-39 (TO-205AD)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max)
40 V

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