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JAN2N6352 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N6352

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-66 (TO-213AA)

Description

Bipolar (BJT) Transistor NPN - Darlington 80 V 5 A 2 W Through Hole TO-66 (TO-213AA)

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
5 A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 5A, 5V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-213AA, TO-66-2
Power - Max
2 W
Series
Military, MIL-PRF-19500/472
Supplier Device Package
TO-66 (TO-213AA)
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
1.5V @ 5mA, 5A
Voltage - Collector Emitter Breakdown (Max)
80 V

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