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JAN2N6032 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N6032

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3

Description

Bipolar (BJT) Transistor NPN 90 V 50 A 140 W Through Hole TO-3

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
50 A
Current - Collector Cutoff (Max)
25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 50A, 2.6V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TA)
Package
Bulk
Package / Case
TO-204AA, TO-3
Power - Max
140 W
Series
Military, MIL-PRF-19500/528
Supplier Device Package
TO-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
90 V

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