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JAN2N5686 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N5686

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3

Description

Bipolar (BJT) Transistor NPN 80 V 500 µA 300 W Through Hole TO-3

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
500 µA
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 25A, 2V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-204AA, TO-3
Power - Max
300 W
Series
Military, MIL-PRF-19500/464
Supplier Device Package
TO-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
5V @ 10A, 50A
Voltage - Collector Emitter Breakdown (Max)
80 V

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