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JAN2N5014 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N5014

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - Single
Package
TO-5

Description

Bipolar (BJT) Transistor NPN 900 V 200 mA 1 W Through Hole TO-5

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
200 mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 10V
Frequency - Transition
-
Mfr
Microsemi Corporation
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AA, TO-5-3 Metal Can
Power - Max
1 W
Series
Military, MIL-PRF-19500/727
Supplier Device Package
TO-5
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
900 V

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