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JAN2N3739 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N3739

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-66 (TO-213AA)

Description

Bipolar (BJT) Transistor NPN 300 V 1 A 20 W Through Hole TO-66 (TO-213AA)

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 250mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-213AA, TO-66-2
Power - Max
20 W
Series
Military, MIL-PRF-19500/402
Supplier Device Package
TO-66 (TO-213AA)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
2.5V @ 25mA, 250mA
Voltage - Collector Emitter Breakdown (Max)
300 V

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