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Product details

JAN2N1483

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-8

Description

Bipolar (BJT) Transistor NPN 40 V 3 A 1.75 W Through Hole TO-8

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
3 A
Current - Collector Cutoff (Max)
15µA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 750mA, 4V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-233AA, TO-8-3 Metal Can
Power - Max
1.75 W
Series
Military, MIL-PRF-19500/180
Supplier Device Package
TO-8
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.20V @ 75mA, 750A
Voltage - Collector Emitter Breakdown (Max)
40 V

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