JANTXV2N6299 product image

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Product details

JANTXV2N6299

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Single
Package: TO-66 (TO-213AA)

Description

Bipolar (BJT) Transistor PNP - Darlington 80 V 500 µA 64 W Through Hole TO-66 (TO-213AA)

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 500 µA
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 1A, 3V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-213AA, TO-66-2
Power - Max: 64 W
Series: Military, MIL-PRF-19500/540
Supplier Device Package: TO-66 (TO-213AA)
Transistor Type: PNP - Darlington
Vce Saturation (Max) @ Ib, Ic: 2V @ 80mA, 8A
Voltage - Collector Emitter Breakdown (Max): 80 V