Skip to main content
Dechoele
Prepare BOM Enquiry Request a Quote
JANTXV2N6251 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTXV2N6251

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-3

Description

Bipolar (BJT) Transistor NPN 350 V 1 mA 5.5 W Through Hole TO-3

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1 mA
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 10A, 3V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-204AA, TO-3
Power - Max
5.5 W
Series
Military, MIL-PRF-19500/510
Supplier Device Package
TO-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.67A, 10A
Voltage - Collector Emitter Breakdown (Max)
350 V

Continue browsing

These products share the same category. Suitability must be confirmed independently.

14-3459 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Plymouth

14-3459