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Product details

MS1006

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
M135

Description

RF Transistor NPN 55V 3.25A 30MHz 127W Stud Mount M135

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
3.25A
DC Current Gain (hFE) (Min) @ Ic, Vce
19 @ 1.4A, 6V
Frequency - Transition
30MHz
Gain
14dB
Mfr
Microsemi Corporation
Mounting Type
Stud Mount
Noise Figure (dB Typ @ f)
-
Operating Temperature
200°C
Package
Bulk
Package / Case
M135
Power - Max
127W
Series
-
Supplier Device Package
M135
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
55V