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BC856B/DG/B4R product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

BC856B/DG/B4R

Availability on request

Manufacturer
Nexperia USA Inc.
Category
Transistors - Bipolar (BJT) - Single
Package
TO-236AB

Description

Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 250 mW Surface Mount TO-236AB

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
BC856
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
125 @ 2mA, 5V
Frequency - Transition
100MHz
Mfr
Nexperia USA Inc.
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
250 mW
Series
-
Supplier Device Package
TO-236AB
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65 V

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