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TB100EP package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

TB100EP

Availability on request

Manufacturer
WeEn Semiconductors
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92-3

Description

Bipolar (BJT) Transistor NPN 700 V 1 A 2 W Through Hole TO-92-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
TB100
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 100mA, 5V
Frequency - Transition
-
Mfr
WeEn Semiconductors
Mounting Type
Through Hole
Operating Temperature
150°C
Package
Tape & Box (TB)
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Power - Max
2 W
Series
-
Supplier Device Package
TO-92-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 150mA, 750mA
Voltage - Collector Emitter Breakdown (Max)
700 V

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