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TS13002ACT A3G product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

TS13002ACT A3G

Availability on request

Manufacturer
Taiwan Semiconductor Corporation
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92

Description

Bipolar (BJT) Transistor NPN 400 V 300 mA 4MHz 600 mW Through Hole TO-92

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
TS13002
Current - Collector (Ic) (Max)
300 mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 100mA, 10V
Frequency - Transition
4MHz
Mfr
Taiwan Semiconductor Corporation
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tape & Box (TB)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max
600 mW
Series
-
Supplier Device Package
TO-92
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.5V @ 20mA, 200mA
Voltage - Collector Emitter Breakdown (Max)
400 V

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