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FJP13007H2TU-F080 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

FJP13007H2TU-F080

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-220-3

Description

Bipolar (BJT) Transistor NPN 400 V 8 A 4MHz 80 W Through Hole TO-220-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
FJP13007
Current - Collector (Ic) (Max)
8 A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A, 5V
Frequency - Transition
4MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power - Max
80 W
Series
-
Supplier Device Package
TO-220-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Voltage - Collector Emitter Breakdown (Max)
400 V

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