Skip to main content
Dechoele
Prepare BOM Enquiry Request a Quote
2SA1313-O(TE85L,F) product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA1313-O(TE85L,F)

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
S-Mini

Description

Bipolar (BJT) Transistor PNP 50 V 500 mA 200MHz 200 mW Surface Mount S-Mini

Datasheet Not provided
Specifications
Base Product Number
2SA1313
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 100mA, 1V
Frequency - Transition
200MHz
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
200 mW
Series
-
Supplier Device Package
S-Mini
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50 V

Continue browsing

These products share the same category. Suitability must be confirmed independently.

14-3459 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Plymouth

14-3459