2SD2257(CANO,Q,M) product image

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Product details

2SD2257(CANO,Q,M)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: TO-220NIS

Description

Bipolar (BJT) Transistor NPN 100 V 3 A 2 W Through Hole TO-220NIS

Datasheet View datasheet

Specifications

Base Product Number: 2SD2257
Current - Collector (Ic) (Max): 3 A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: -
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-220-3 Full Pack
Power - Max: 2 W
Series: -
Supplier Device Package: TO-220NIS
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
Voltage - Collector Emitter Breakdown (Max): 100 V