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Product details

2SC5201,T6F(J

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92MOD

Description

Bipolar (BJT) Transistor NPN 600 V 50 mA 900 mW Through Hole TO-92MOD

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SC5201
Current - Collector (Ic) (Max)
50 mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 20mA, 5V
Frequency - Transition
-
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 Long Body
Power - Max
900 mW
Series
-
Supplier Device Package
TO-92MOD
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 20mA
Voltage - Collector Emitter Breakdown (Max)
600 V

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