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2SC2229-Y(T6ONK1FM product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SC2229-Y(T6ONK1FM

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
TO-92MOD

Description

Bipolar (BJT) Transistor NPN 150 V 50 mA 120MHz 800 mW Through Hole TO-92MOD

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SC2229
Current - Collector (Ic) (Max)
50 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Frequency - Transition
120MHz
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Bulk
Package / Case
TO-226-3, TO-92-3 Long Body
Power - Max
800 mW
Series
-
Supplier Device Package
TO-92MOD
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
150 V

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