EMF22T2R product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

EMF22T2R

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel (TR)

Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 100mA, 500mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 270 @ 10mA, 2V
Frequency - Transition: 250MHz, 320MHz
Mfr: Rohm Semiconductor
Mounting Type: Surface Mount
Package: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Power - Max: 150mW
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Series: -
Supplier Device Package: EMT6
Transistor Type: 1 NPN Pre-Biased, 1 NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V