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TIP120 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

TIP120

Availability on request

Manufacturer
Central Semiconductor Corp
Category
Transistors - Bipolar (BJT) - Single
Package
TO-220-3

Description

Bipolar (BJT) Transistor NPN - Darlington 60 V 4MHz Through Hole TO-220-3

Specifications
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A, 3V
Frequency - Transition
4MHz
Mfr
Central Semiconductor Corp
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Package
Bulk
Package / Case
TO-220-3
Series
-
Supplier Device Package
TO-220-3
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
4V @ 20mA, 5A
Voltage - Collector Emitter Breakdown (Max)
60 V