2N2907A product image

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Product details

2N2907A

Availability on request

Manufacturer: STMicroelectronics
Category: Transistors - Bipolar (BJT) - Single
Package: TO-18

Description

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 400 mW Through Hole TO-18

Datasheet View datasheet

Specifications

Base Product Number: 2N29
Current - Collector (Ic) (Max): 600 mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Mfr: STMicroelectronics
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Package: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Power - Max: 400 mW
Series: -
Supplier Device Package: TO-18
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 60 V