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JAN2N918 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N918

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-72

Description

Bipolar (BJT) Transistor NPN 15 V 50 mA 200 mW Through Hole TO-72

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
50 mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 3mA, 1V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-72-3 Metal Can
Power - Max
200 mW
Series
Military, MIL-PRF-19500/301
Supplier Device Package
TO-72
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
15 V

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