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JANTXV2N5667S product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTXV2N5667S

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-39 (TO-205AD)

Description

Bipolar (BJT) Transistor NPN 300 V 5 A 1.2 W Through Hole TO-39 (TO-205AD)

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2N5667
Current - Collector (Ic) (Max)
5 A
Current - Collector Cutoff (Max)
200nA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A, 5V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
1.2 W
Series
Military, MIL-PRF-19500/455
Supplier Device Package
TO-39 (TO-205AD)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max)
300 V

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