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JANTXV2N5581 package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTXV2N5581

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-46 (TO-206AB)

Description

Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Through Hole TO-46 (TO-206AB)

Datasheet Not provided
Specifications
Base Product Number
2N5581
Current - Collector (Ic) (Max)
800 mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-206AB, TO-46-3 Metal Can
Power - Max
500 mW
Series
Military, MIL-PRF-19500/423
Supplier Device Package
TO-46 (TO-206AB)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50 V

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