2N4957 product image

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Product details

2N4957

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - RF
Package: Bulk

Description

RF Transistor PNP 30V 30mA 200mW Through Hole TO-72

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Frequency - Transition: -
Gain: 25dB
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-72-3 Metal Can
Power - Max: 200mW
Series: -
Supplier Device Package: TO-72
Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V