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JAN2N4261 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N4261

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-72

Description

Bipolar (BJT) Transistor PNP 15 V 30 mA 200 mW Through Hole TO-72

Datasheet Not provided
Specifications
Base Product Number
2N4261
Current - Collector (Ic) (Max)
30 mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 1V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-72-3 Metal Can
Power - Max
200 mW
Series
Military, MIL-PRF-19500/511
Supplier Device Package
TO-72
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
350mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
15 V

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