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JANTXV2N3960 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTXV2N3960

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - Single
Package
TO-18 (TO-206AA)

Description

Bipolar (BJT) Transistor NPN 12 V 400 mW Through Hole TO-18 (TO-206AA)

Datasheet Not provided
Specifications
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 1V
Frequency - Transition
-
Mfr
Microsemi Corporation
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-206AA, TO-18-3 Metal Can
Power - Max
400 mW
Series
Military, MIL-PRF-19500/399
Supplier Device Package
TO-18 (TO-206AA)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
300mV @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max)
12 V

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