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Product details

JAN2N3879

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-66 (TO-213AA)

Description

Bipolar (BJT) Transistor NPN 75 V 7 A 35 W Through Hole TO-66 (TO-213AA)

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
7 A
Current - Collector Cutoff (Max)
25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A, 5V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-213AA, TO-66-2
Power - Max
35 W
Series
Military, MIL-PRF-19500/526
Supplier Device Package
TO-66 (TO-213AA)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
1.2V @ 400mA, 4A
Voltage - Collector Emitter Breakdown (Max)
75 V

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