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Product details

JAN2N3507AL

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Single
Package: TO-5

Description

Bipolar (BJT) Transistor NPN 50 V 3 A 1 W Through Hole TO-5

Datasheet Not provided

Specifications

Base Product Number: 2N3507
Current - Collector (Ic) (Max): 3 A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Power - Max: 1 W
Series: Military, MIL-PRF-19500/349
Supplier Device Package: TO-5
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Voltage - Collector Emitter Breakdown (Max): 50 V