JAN2N3506A product image

Image shown for reference only. Refer to the product datasheet for exact specifications. 所示图片仅供参考。确切规格请参考产品数据手册即可

Product details

JAN2N3506A

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - Bipolar (BJT) - Single
Package: TO-39 (TO-205AD)

Description

Bipolar (BJT) Transistor NPN 40 V 3 A 1 W Through Hole TO-39 (TO-205AD)

Datasheet Not provided

Specifications

Base Product Number: 2N3506
Current - Collector (Ic) (Max): 3 A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Frequency - Transition: -
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Power - Max: 1 W
Series: Military, MIL-PRF-19500/349
Supplier Device Package: TO-39 (TO-205AD)
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
Voltage - Collector Emitter Breakdown (Max): 40 V