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JAN2N3499 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N3499

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-39 (TO-205AD)

Description

Bipolar (BJT) Transistor NPN 100 V 500 mA 1 W Through Hole TO-39 (TO-205AD)

Datasheet Not provided
Specifications
Base Product Number
2N3499
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
1 W
Series
Military, MIL-PRF-19500/366
Supplier Device Package
TO-39 (TO-205AD)
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)
100 V

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