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JAN2N2857 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N2857

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
TO-72

Description

RF Transistor NPN 15V 40mA 500MHz 200mW Through Hole TO-72

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
40mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 3mA, 1V
Frequency - Transition
500MHz
Gain
12.5dB ~ 21dB @ 450MHz
Mfr
Microsemi Corporation
Mounting Type
Through Hole
Noise Figure (dB Typ @ f)
4.5dB @ 450MHz
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-72-3 Metal Can
Power - Max
200mW
Series
Military, MIL-PRF-19500/343
Supplier Device Package
TO-72
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
15V

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