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JAN2N7370 package illustration

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N7370

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-254AA

Description

Bipolar (BJT) Transistor NPN - Darlington 100 V 12 A 100 W Through Hole TO-254AA

Datasheet Not provided
Specifications
Base Product Number
2N7370
Current - Collector (Ic) (Max)
12 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 6A, 3V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Power - Max
100 W
Series
Military, MIL-PRF-19500/624
Supplier Device Package
TO-254AA
Transistor Type
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Voltage - Collector Emitter Breakdown (Max)
100 V

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