Product image not available

Product details

JANTX2N6250T1

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor NPN 275 V 10 A 6 W Through Hole TO-254AA

Datasheet Not provided

Specifications

Base Product Number: 2N6250
Current - Collector (Ic) (Max): 10 A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
Frequency - Transition: -
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Package: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Power - Max: 6 W
Series: Military, MIL-PRF-19500/510
Supplier Device Package: TO-254AA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
Voltage - Collector Emitter Breakdown (Max): 275 V