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JANTX2N5416S product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JANTX2N5416S

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-39

Description

Bipolar (BJT) Transistor PNP 300 V 1 A 750 mW Through Hole TO-39

Datasheet Not provided
Specifications
Base Product Number
2N5416
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
750 mW
Series
Military, MIL-PRF-19500/485
Supplier Device Package
TO-39
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
2V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
300 V

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