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2SD1060R-1EX product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SD1060R-1EX

Availability on request

Manufacturer
onsemi
Category
Transistors - Bipolar (BJT) - Single
Package
TO-220-3

Description

Bipolar (BJT) Transistor NPN 50 V 5 A 30MHz 1.75 W Through Hole TO-220-3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
2SD1060
Current - Collector (Ic) (Max)
5 A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Frequency - Transition
30MHz
Mfr
onsemi
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Package
Tube
Package / Case
TO-220-3
Power - Max
1.75 W
Series
-
Supplier Device Package
TO-220-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
50 V

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