2SD1060R-1E product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

2SD1060R-1E

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single
Package: TO-220-3

Description

Bipolar (BJT) Transistor NPN 50 V 5 A 30MHz 1.75 W Through Hole TO-220-3

Datasheet View datasheet

Specifications

Base Product Number: 2SD1060
Current - Collector (Ic) (Max): 5 A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 30MHz
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power - Max: 1.75 W
Series: -
Supplier Device Package: TO-220-3
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max): 50 V