APT10SCD65K product image

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Product details

APT10SCD65K

Availability on request

Manufacturer: Microsemi Corporation
Category: Diodes - Rectifiers - Single
Package: Bulk

Description

Diode Silicon Carbide Schottky 650 V 17A Through Hole TO-220 [K]

Datasheet Not provided

Specifications

Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 17A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Diode Type: Silicon Carbide Schottky
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature - Junction: -55°C ~ 150°C
Package: Bulk
Package / Case: TO-220-2
Reverse Recovery Time (trr): 0 ns
Series: -
Speed: No Recovery Time > 500mA (Io)
Supplier Device Package: TO-220 [K]
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A