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RN1101ACT(TPL3) product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

RN1101ACT(TPL3)

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Package
CST3

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
RN1101
Current - Collector (Ic) (Max)
80 mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
SC-101, SOT-883
Power - Max
100 mW
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
Series
-
Supplier Device Package
CST3
Transistor Type
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max)
50 V

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