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2SC2859-GR(TE85L,F product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SC2859-GR(TE85L,F

Availability on request

Manufacturer
Toshiba Semiconductor and Storage
Category
Transistors - Bipolar (BJT) - Single
Package
S-Mini

Description

Bipolar (BJT) Transistor NPN 30 V 500 mA 300MHz 150 mW Surface Mount S-Mini

Datasheet Not provided
Specifications
Base Product Number
2SC2859
Current - Collector (Ic) (Max)
500 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 1V
Frequency - Transition
300MHz
Mfr
Toshiba Semiconductor and Storage
Mounting Type
Surface Mount
Operating Temperature
125°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
150 mW
Series
-
Supplier Device Package
S-Mini
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30 V

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