RN2607(TE85L,F) product image

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Product details

RN2607(TE85L,F)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6

Datasheet Not provided

Specifications

Base Product Number: RN2607
Current - Collector (Ic) (Max): 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: SC-74, SOT-457
Power - Max: 300mW
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Series: -
Supplier Device Package: SM6
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V