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SI3585CDV-T1-GE3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SI3585CDV-T1-GE3

Availability on request

Manufacturer
Vishay Siliconix
Category
Transistors - FETs, MOSFETs - Arrays
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array N and P-Channel 20V 3.9A, 2.1A 1.4W, 1.3W Surface Mount 6-TSOP

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
SI3585
Current - Continuous Drain (Id) @ 25°C
3.9A, 2.1A
Drain to Source Voltage (Vdss)
20V
FET Feature
Logic Level Gate
FET Type
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs
4.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 10V
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
SOT-23-6 Thin, TSOT-23-6
Power - Max
1.4W, 1.3W
Rds On (Max) @ Id, Vgs
58mOhm @ 2.5A, 4.5V
Series
TrenchFET®
Supplier Device Package
6-TSOP
Vgs(th) (Max) @ Id
1.5V @ 250µA

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