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Product details
JANTX2N3019S
Availability on request
Description
Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-39
Datasheet
Not provided
Specifications
- Base Product Number
- 2N3019
- Current - Collector (Ic) (Max)
- 1 A
- Current - Collector Cutoff (Max)
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 500mA, 10V
- Frequency - Transition
- -
- Mfr
- Microchip Technology
- Mounting Type
- Through Hole
- Operating Temperature
- -65°C ~ 200°C (TJ)
- Package
- Bulk
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Power - Max
- 800 mW
- Series
- Military, MIL-PRF-19500/391
- Supplier Device Package
- TO-39
- Transistor Type
- NPN
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)
- 80 V