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Product details

JANTX2N3019S

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
Bulk

Description

Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-39

Datasheet Not provided
Specifications
Base Product Number
2N3019
Current - Collector (Ic) (Max)
1 A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA, 10V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
800 mW
Series
Military, MIL-PRF-19500/391
Supplier Device Package
TO-39
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80 V