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JAN2N3737 product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

JAN2N3737

Availability on request

Manufacturer
Microchip Technology
Category
Transistors - Bipolar (BJT) - Single
Package
TO-46-3

Description

Bipolar (BJT) Transistor NPN 40 V 1.5 A 500 mW Through Hole TO-46-3

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
1.5 A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 1A, 1.5V
Frequency - Transition
-
Mfr
Microchip Technology
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-206AB, TO-46-3 Metal Can
Power - Max
500 mW
Series
Military, MIL-PRF-19500/395
Supplier Device Package
TO-46-3
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
900mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
40 V

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