Vishay General Semiconductor - Diodes Division
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Product details
2N7335
Availability on request
Description
Mosfet Array 4 P-Channel 100V 750mA 1.4W Through Hole MO-036AB
Datasheet
Not provided
Specifications
- Current - Continuous Drain (Id) @ 25°C
- 750mA
- Drain to Source Voltage (Vdss)
- 100V
- FET Feature
- Standard
- FET Type
- 4 P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- -
- Input Capacitance (Ciss) (Max) @ Vds
- -
- Mfr
- Microsemi Corporation
- Mounting Type
- Through Hole
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Package
- Bulk
- Package / Case
- 14-DIP (0.300", 7.62mm)
- Power - Max
- 1.4W
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 500mA, 10V
- Series
- -
- Supplier Device Package
- MO-036AB
- Vgs(th) (Max) @ Id
- 4V @ 250µA