2SA1163-BL,LF product image

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product details

2SA1163-BL,LF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: S-Mini

Description

Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini

Datasheet Not provided

Specifications

Base Product Number: 2SA1163
Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 150 mW
Series: -
Supplier Device Package: S-Mini
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120 V