RN2404TE85LF product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

RN2404TE85LF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: S-Mini

Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount S-Mini

Datasheet Not provided

Specifications

Base Product Number: RN2404
Current - Collector (Ic) (Max): 100 mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200 MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Series: -
Supplier Device Package: S-Mini
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50 V