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APT50GS60BRDLG product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

APT50GS60BRDLG

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - IGBTs - Single
Package
Tube

Description

IGBT NPT 600 V 93 A 415 W Through Hole TO-247

Datasheet Not provided
Specifications
Base Product Number
APT50GS60
Current - Collector (Ic) (Max)
93 A
Current - Collector Pulsed (Icm)
195 A
Gate Charge
235 nC
IGBT Type
NPT
Input Type
Standard
Mfr
Microsemi Corporation
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Package / Case
TO-247-3
Power - Max
415 W
Series
-
Supplier Device Package
TO-247
Switching Energy
755µJ (off)
Td (on/off) @ 25°C
16ns/225ns
Test Condition
400V, 50A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic
3.15V @ 15V, 50A
Voltage - Collector Emitter Breakdown (Max)
600 V