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Product details

MS1007

Availability on request

Manufacturer
Microsemi Corporation
Category
Transistors - Bipolar (BJT) - RF
Package
M174

Description

RF Transistor NPN 55V 10A 30MHz 233W Chassis Mount M174

Datasheet Not provided
Specifications
Current - Collector (Ic) (Max)
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
18 @ 1.4A, 6V
Frequency - Transition
30MHz
Gain
14dB
Mfr
Microsemi Corporation
Mounting Type
Chassis Mount
Noise Figure (dB Typ @ f)
-
Operating Temperature
200°C (TJ)
Package
Bulk
Package / Case
M174
Power - Max
233W
Series
-
Supplier Device Package
M174
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
55V